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| ?2002 fairchild semiconductor corporation sgh20n60rufd rev. b1 igbt sgh20n60rufd sgh20n60rufd short circuit rated igbt general description fairchild's rufd series of insulated gate bipolar transistors (igbts) provide low conduction and switching losses as well as short circuit ruggedness. the rufd series is designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? short circuit rated 10us @ t c = 100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce(sat) = 2.2 v @ i c = 20a ? high input impedance ? co-pak, igbt with frd : t rr = 50ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgh20n60rufd units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c32 a collector current @ t c = 100 c20 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @ t c = 100 c25 a i fm diode maximum forward current 220 a t sc short circuit withstand time @ t c = 100 c10 us p d maximum power dissipation @ t c = 25 c 195 w maximum power dissipation @ t c = 100 c75 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.64 c / w r jc (diode) thermal resistance, junction-to-case -- 0.83 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. g c e to-3p n g c e g c e
sgh20n60rufd rev. b1 sgh20n60rufd ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v b vces / t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 5.0 6.0 8.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 2.2 2.8 v i c = 32a , v ge = 15v -- 2.5 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1323 -- pf c oes output capacitance -- 254 -- pf c res reverse transfer capacitance -- 47 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 c -- 30 -- ns t r rise time -- 49 -- ns t d(off) turn-off delay time -- 48 70 ns t f fall time -- 152 200 ns e on turn-on switching loss -- 524 -- uj e off turn-off switching loss -- 473 -- uj e ts total switching loss -- 997 1400 uj t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 125 c -- 30 -- ns t r rise time -- 51 -- ns t d(off) turn-off delay time -- 52 75 ns t f fall time -- 311 400 ns e on turn-on switching loss -- 568 -- uj e off turn-off switching loss -- 1031 -- uj e ts total switching loss -- 1599 2240 uj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 20a, v ge = 15v -- 55 80 nc q ge gate-emitter charge -- 10 15 nc q gc gate-collector charge -- 25 40 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 25a t c = 25 c -- 1.4 1.7 v t c = 100 c -- 1.3 -- t rr diode reverse recovery time i f = 25a, di/dt = 200 a/us t c = 25 c -- 50 95 ns t c = 100 c -- 105 -- i rr diode peak reverse recovery current t c = 25 c -- 4.5 10 a t c = 100 c -- 8.5 -- q rr diode reverse recovery charge t c = 25 c -- 112 375 nc t c = 100 c -- 420 -- sgh20n60rufd rev. b1 sgh20n60rufd ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 10 20 30 40 50 60 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 110 0 10 20 30 40 50 60 common emitter v ge = 15v t c = 25 t c = 125 ------ collector current, i c [a] collector - emitter voltage, v ce [v] -50 0 50 100 150 0 1 2 3 4 5 20a 40a 30a i c = 10a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 0 4 8 12 16 20 24 28 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 32w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 048121620 0 4 8 12 16 20 common emitter t c = 25 40a 20a i c = 10a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 125 40a 20a i c = 10a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] sgh20n60rufd rev. b1 sgh20n60rufd ?2002 fairchild semiconductor corporation fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 400 800 1200 1600 2000 2400 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] 1 10 100 10 100 common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ ton tr switching time [ns] gate resistance, r g [ ] 110100 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ switching time [ns] gate resistance, r g [ ] 110100 100 1000 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ switching loss [uj] gate resistance, r g [ ] 10 15 20 25 30 35 40 10 100 ton tr common emitter v ge = 15v, r g = 10 t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a] 10 15 20 25 30 35 40 100 1000 tf toff toff tf common emitter v ge = 15v, r g = 10 t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a] sgh20n60rufd rev. b1 sgh20n60rufd ?2002 fairchild semiconductor corporation fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 17. transient thermal impedance of igbt fig 13. switching loss vs. collector current 0.3 1 10 100 1000 0.1 1 10 100 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50 ? 100 ? 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector-emitter voltage, v ce [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c 10 15 20 25 30 35 40 100 1000 eoff eon eoff common emitter v ge = 15v, r g = 10 t c = 25 t c = 125 ------ switching loss [uj] collector current, i c [a] 0 102030405060 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 15 t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] sgh20n60rufd rev. b1 sgh20n60rufd ?2002 fairchild semiconductor corporation fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time 1 10 100 0123 t c = 25 t c = 100 ------ forward voltage drop, v fm [v] forward current, i f [a] 100 1000 1 10 100 v r = 200v i f = 25a t c = 25 t c = 100 ------ reverse recovery current, i rr [a] di/dt [a/us] 100 1000 0 200 400 600 800 1000 v r = 200v i f = 25a t c = 25 t c = 100 ------ stored recovery charge, q rr [nc] di/dt [a/us] 100 1000 20 40 60 80 100 120 v r = 200v i f = 25a t c = 25 t c = 100 ------ reverce recovery time, t rr [ns] di/dt [a/us] ?2002 fairchild semiconductor corporation sgh20n60rufd rev. b1 sgh20n60rufd mechanical dimensions dimensions in millimeters to-3pn !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ !"# ! $ % & '( ) * + ,-./ , 0 " " "! "# ! 1+# ! % ! 0 #23 #24 #25 ( ( + # 6% 6 7 ! 0!$ 8! # ! 0!, 8 0! ,! 0 +$! '! |
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